Semiconductor device and method for manufacturing the same

ABSTRACT

To miniaturize metal columns. A semiconductor device includes a metal column (14) that extends in a stretching direction; a polymer layer (16) that surrounds the metal column from a direction crossing the stretching direction; and a guide (12) that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture (20) containing metal particles (22) and polymers (24) in a guide (12); and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer (16) that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column (14) that stretches in a stretching direction of the guide from the metal particles.

This is a Continuation-in-Part of Application No. PCT/JP2015/073934filed Aug. 26, 2015, which claims the benefit of Japanese ApplicationNo. 2014-179486 filed Sep. 3, 2014. The disclosures of the priorapplications are hereby incorporated by reference herein in theirentirety.

TECHNICAL FIELD

The present invention relates to a semiconductor device and a method formanufacturing the same, and more specifically, relates to asemiconductor device having metal columns and a method for manufacturingthe same.

BACKGROUND ART

Miniaturization of metal columns such as through-silicon vias (TSVs)which are penetration electrodes that pass through semiconductorsubstrates and bumps for connecting semiconductor chips is required torealize miniaturization of 3-dimensional integrated circuits.

Patent Documents 1 and 2 disclose techniques for forming fine periodicpatterns using self-organizing polymers. Non-Patent Document 1 disclosesa technique for heating an anisotropic conductive paste in which solderparticles are dispersed so that the solder particles agglomerate in anelectrode portion and a metallic bond is formed between the electrodeand the solder.

CITATION LIST Patent Document

-   Patent Document 1: Japanese Patent Application Laid-Open No.    2013-146538-   Patent Document 2: Japanese Patent Application Laid-Open No.    2014-005325

Non-Patent Document

-   Non-Patent Document 1: Sekisui Chemical Co., Ltd., Press Release,    May 27, 2014, <URL:    http://www.sekisui.co.jp/news/2014/1244746_20127.html>

SUMMARY OF THE INVENTION Problems to be Solved by the Invention

Patent Documents 1 and 2 do not disclose how to form metal columns suchas penetration electrodes and bumps. In Non-Patent Document 1, it is notpossible to miniaturize bumps.

The present invention has been made in view of the above-describedproblems and an object thereof is to miniaturize metal columns.

Solutions to Problems

The present invention provides a semiconductor device including: a metalcolumn that extends in a stretching direction; a polymer layer thatsurrounds the metal column from a direction crossing the stretchingdirection; and a guide that surrounds the polymer layer in the crossingdirection so as to be spaced from the metal column with the polymerlayer interposed therebetween.

In this configuration, the semiconductor device may further include afirst substrate and a second substrate stacked in the stretchingdirection, and the metal column may be a bump that electrically connectsthe first and second substrates.

In this configuration, the guide may be provided in at least one of thefirst and second substrates.

In this configuration, the semiconductor device may further include aplurality of first electrodes provided on a surface of the firstsubstrate facing the second substrate; and a plurality of secondelectrodes provided on a surface of the second substrate facing thefirst substrate, and the metal column may connect the plurality of firstelectrodes and the plurality of second electrodes.

In this configuration, the semiconductor device may further include afirst circuit provided in the first substrate so as to be electricallyconnected to the plurality of first electrodes; a second circuitprovided in the second substrate so as to be electrically connected tothe plurality of second electrodes; a detection circuit that detects asecond electrode of the plurality of second electrodes to which at leastone first electrode of the plurality of first electrodes is connected;and a switching circuit that switches at least one of connection betweenthe first circuit and the plurality of first electrodes and connectionbetween the second circuit and the plurality of second electrodes on thebasis of a detection result of the detection circuit.

In this configuration, the semiconductor device may further include asemiconductor substrate, and the guide may be an insulator film formedon an inner surface of a through-hole that passes through thesemiconductor substrate, the polymer layer may be filled in thethrough-hole, and the metal column may be a penetration electrode thatpasses through the polymer layer.

In this configuration, a plurality of the metal columns may be providedin the guide.

In this configuration, one metal column may be provided in the guide.

In this configuration, the guide may be hydrophilic and a region of thepolymer layer making contact with the guide may be hydrophilic.

In this configuration, the polymer layer may include a hydrophilicpolymer layer provided on an inner side of the guide and a hydrophobicpolymer layer provided on an inner side of the hydrophilic polymerlayer, and the metal column may be provided on an inner side of thehydrophobic polymer layer.

In this configuration, the polymer layer may include a hydrophilicpolymer layer provided on an inner side of the guide and a hydrophobicpolymer layer provided on an inner side of the hydrophilic polymerlayer, and the metal column may be provided in a ring form between thehydrophilic polymer layer and the hydrophobic polymer layer.

In this configuration, the polymer layer may include a hydrophilicpolymer layer provided on an inner side of the guide and a hydrophobicpolymer layer provided on an inner side of the hydrophilic polymerlayer, and a plurality of the metal columns may be provided between thehydrophilic polymer layer and the hydrophobic polymer layer.

In this configuration, the guide may be hydrophobic and a region of thepolymer layer making contact with the guide may be hydrophobic.

In this configuration, the polymer layer may include a hydrophobicpolymer layer provided on an inner side of the guide and a hydrophilicpolymer layer provided on an inner side of the hydrophilic polymerlayer, and the metal column may be provided on an inner side of thehydrophilic polymer layer.

In this configuration, the polymer layer may include a hydrophobicpolymer layer provided on an inner side of the guide and a hydrophilicpolymer layer provided on an inner side of the hydrophilic polymerlayer, and the metal column may be provided in a ring form between thehydrophobic polymer layer and the hydrophilic polymer layer.

In this configuration, the polymer layer may include a hydrophobicpolymer layer provided on an inner side of the guide and a hydrophilicpolymer layer provided on an inner side of the hydrophilic polymerlayer, and a plurality of the metal columns may be provided between thehydrophobic polymer layer and the hydrophilic polymer layer.

In this configuration, the metal column may be a multi-particle member.

In this configuration, a material of the metal column may have a meltingpoint equal to or higher than a melting point of a material of thepolymer layer.

The present invention also provides a semiconductor device including: afirst substrate and a second substrate which are stacked; a plurality offirst electrodes provided on a surface of the first substrate facing thesecond substrate; a plurality of second electrodes provided on a surfaceof the second substrate facing the first substrate; a plurality of bumpsthat connect the plurality of first electrodes and the plurality ofsecond electrodes, respectively; a first circuit provided in the firstsubstrate so as to be electrically connected to the plurality of firstelectrodes; a second circuit provided in the second substrate so as tobe electrically connected to the plurality of second electrodes; adetection circuit that detects a second electrode of the plurality ofsecond electrodes to which at least one first electrode of the pluralityof first electrodes is connected; and a switching circuit that switchesat least one of connection between the first circuit and the pluralityof first electrodes and connection between the second circuit and theplurality of second electrodes on the basis of a detection result of thedetection circuit.

The present invention also provides a method for manufacturingsemiconductor devices including: a step of filling a mixture containingmetal particles and polymers in a guide; and a step of subjecting themixture to a heat treatment so that the polymers agglomerate to theguide to form a polymer layer that makes contact with the guide and themetal particles agglomerate away from the guide with the polymer layerinterposed therebetween to form a metal column that stretches in astretching direction of the guide from the metal particles.

In this configuration, the method may further include a step ofdisposing a second substrate on a first substrate, and the step ofsubjecting to the heat treatment may include a step of forming the metalcolumn as a bump that electrically connects the first and secondsubstrates.

In this configuration, the step of filling the mixture may include astep of forming the mixture on at least one surface of the first andsecond substrates so that the mixture is filled in the guide formed inthe at least one surface of the first and second substrates.

In this configuration, the method may further include a step of forminga through-hole so as to pass through a semiconductor substrate; and astep of forming an insulating film as the guide on an inner surface ofthe through-hole, and the step of filling the mixture may be a step offilling the mixture in the through-hole, and the metal column may be apenetration electrode that passes through the polymer layer.

In this configuration, the guide may be hydrophilic and the polymers mayinclude at least hydrophilic polymers.

In this configuration, the polymers may include hydrophilic polymers andhydrophobic polymers, and in the step of subjecting the mixture to theheat treatment, the hydrophilic polymers may agglomerate to the guideand the hydrophobic polymers may agglomerate away from the guide.

In this configuration, the guide may be hydrophobic, and the polymersmay include at least hydrophobic polymers.

In this configuration, the polymers may include hydrophilic polymers andhydrophobic polymers, and in the step of subjecting the mixture to theheat treatment, the hydrophobic polymers may agglomerate to the guideand the hydrophilic polymers may agglomerate away from the guide.

In this configuration, the step of subjecting the mixture to the heattreatment may be a step of subjecting the mixture to a heat treatment ata higher temperature than a melting point of the polymers.

A method for manufacturing semiconductor devices according to thepresent invention may include a step of filling a mixture containingmetal particles and polymers between a pair of guides that extends in ahorizontal direction; and a step of subjecting the mixture to a heattreatment so that the polymers agglomerate to the guides to form apolymer layer that makes contact with the guides and the metal particlesagglomerate away from the guides with the polymer layer interposedtherebetween to form a metal column that stretches in a horizontaldirection from the metal particles. In this case, it is possible toobtain a semiconductor device including a metal column that stretches ina horizontal direction; a polymer layer that sandwiches the metal columnfrom a direction crossing the stretching direction; and a pair of guidesthat sandwiches the metal column and the polymer layer in the crossingdirection so as to be spaced from the metal column with the polymerlayer interposed therebetween. Moreover, it is possible to easily formmetal columns that extend in the horizontal direction.

Moreover, a method for manufacturing semiconductor devices according tothe present invention may include: a step of forming a metal film on asurface of a pair of guides that extends in a horizontal direction; astep of filling a mixture containing metal particles and polymersbetween the guides; and a step of subjecting the mixture to a heattreatment so that the metal particles agglomerate to the guides to forma metal column that stretches in a stretching direction of the guides soas to make contact with the guides and the polymers agglomerate awayfrom the guides with the metal column interposed therebetween to form apolymer layer that stretches in the stretching direction of the guides.In this case, it is possible to obtain a semiconductor device including:a polymer layer that stretches in a stretching direction; a metal columnthat sandwiches the polymer layer from a direction crossing thestretching direction; and a pair of guides that sandwiches the metalcolumn and the polymer layer in the crossing direction so as to bespaced from the polymer layer with the metal column interposedtherebetween. Moreover, it is possible to form metal columns at anarrower interval and to narrow the interval of metal wirings formedfrom the metal columns. Furthermore, the method may preferably include astep of removing a metal film exposed to the surface of the respectiveguides. When the guides are provided on the surface of a substrate orthe like, by forming the metal film so as to cover the surface of thesubstrate or the like and the surface of the respective guides andforming a guide layer on the metal film between the guides at aninterval from the guides, it is possible to allow the polymers toagglomerate in the range of the guide layer to form a polymer layer thatseparates the metal columns.

Moreover, a method for manufacturing semiconductor devices according tothe present invention may include: a step of forming a pair of guides ofwhich the inner portion is formed of metal and of which the surface iscovered by a hydrophilic or hydrophobic thin film, the guides extendingin a horizontal direction; a step of filling a mixture containing metalparticles and polymers between the guides; and a step of subjecting themixture to a heat treatment so that the polymers agglomerate to theguides to form a polymer layer that makes contact with the guides andthe metal particles agglomerate away from the guides with the polymerlayer interposed therebetween to form a metal column that stretches inthe stretching direction of the guides from the metal particles. In thiscase, it is possible to obtain a semiconductor device including: a metalcolumn that stretches in a stretching direction; a polymer layer thatsandwiches the metal column from a direction crossing the stretchingdirection; and a pair of guides of which the inner portion is formed ofmetal and which sandwiches the metal column and the polymer layer in thecrossing direction so as to be spaced from the metal column with thepolymer layer interposed therebetween. Moreover, by using the metallicportion of the inner portion of each guide and the metal column as metalwirings, it is possible to form metal wirings at a narrower interval.Furthermore, the method may preferably include a step of removing a thinfilm exposed to the surface of each guide.

In the method for manufacturing semiconductor devices according to thepresent invention, the step of subjecting the mixture to the heattreatment may be performed after a plurality of planar supports in whicha plurality of guides is provided on a surface and the mixture is filledbetween the guides are stacked. In this case, it is possible to obtain asemiconductor device formed by stacking a plurality of planar supportsin which one or a plurality of the metal columns, one or a plurality ofthe polymer layers, and a plurality of the guides are provided so as tostretch along a surface in a vertical direction to the surface.Moreover, it is possible to form metal columns at a time in respectivelayers in which the supports are stacked. The method may include a stepof removing the formed polymer layers after the heat treatment. In thisway, it is possible to form multilayer wirings.

Effects of the Invention

According to the present invention, it is possible to miniaturize metalcolumns.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1(a) to 1(d) are diagrams for describing a method for formingmetal columns according to Embodiment 1.

FIGS. 2(a) and 2(b) are diagrams illustrating a method for forming metalcolumns according to Embodiment 2.

FIGS. 3(a) and 3(b) are diagrams illustrating a method for forming metalcolumns according to Modification 1 of Embodiment 2.

FIGS. 4(a) and 4(b) are diagrams illustrating a method for forming metalcolumns according to Modification 2 of Embodiment 2.

FIGS. 5(a) to 5(e) are diagrams illustrating a method for forming metalcolumns according to Embodiment 3.

FIGS. 6(a) to 6(e) are cross-sectional views illustrating a method formanufacturing semiconductor devices according to Embodiment 4.

FIGS. 7(a) to 7(e) are cross-sectional views illustrating a method formanufacturing semiconductor devices according to Modification 1 ofEmbodiment 4.

FIGS. 8(a) to 8(d) are cross-sectional views illustrating a method formanufacturing semiconductor devices according to Modification 2 ofEmbodiment 4.

FIGS. 9(a) to 9(c) are cross-sectional views (Example 1) illustrating amethod for manufacturing semiconductor devices according to Embodiment5.

FIGS. 10(a) and 10(b) are cross-sectional views (Example 2) illustratinga method for manufacturing semiconductor devices according to Embodiment5.

FIG. 11 is a cross-sectional view (Example 3) illustrating a method formanufacturing semiconductor devices according to Embodiment 5.

FIG. 12 illustrates an example of an alignment error occurring inEmbodiment 5.

FIG. 13 is a block diagram of a semiconductor device according toEmbodiment 6.

FIG. 14 is a block diagram illustrating an example of a detectioncircuit of Embodiment 6.

FIG. 15 is a block diagram (Example 1) for describing an example of anoperation of the semiconductor device according to Embodiment 6.

FIG. 16 is a block diagram (Example 2) for describing an example of anoperation of the semiconductor device according to Embodiment 6.

FIGS. 17(a) and 17(b) are a plan view and a cross-sectional view,respectively, illustrating a method for forming metal columns accordingto Embodiment 7.

FIGS. 18(a) and 18(b) are cross-sectional views before and after a heattreatment is performed, respectively, illustrating a method for formingmetal columns according to Embodiment 8.

FIGS. 19(a) and 19(b) are cross-sectional views before and after a heattreatment is performed, respectively, illustrating a method for formingmetal columns according to a modification of Embodiment 8.

FIGS. 20(a) and 20(b) are cross-sectional views before and after a heattreatment is performed, respectively, illustrating a method for formingmetal columns according to Embodiment 9.

MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the drawings.

Embodiment 1

FIGS. 1(a) to 1(d) are diagrams for describing a method for formingmetal columns according to Embodiment 1. FIGS. 1(a) and 1(c) are planviews and FIGS. 1(b) and 1(d) are cross-sectional views along A-A inFIGS. 1(a) and 1(c), respectively.

As illustrated in FIGS. 1(a) and 1(b), a mixture 20 containing metalparticles 22 and polymers 24 is filled in a guide 12. The guide 12 hashydrophilic or hydrophobic properties. As examples of the guide 12having hydrophilic properties, inorganic insulators such as siliconoxides or silicon nitrides or metal can be used. As examples of theguide 12 having hydrophobic properties, an organic insulating film suchas a hydrophobic polymer can be used. The guide 12 may be a film formedon a substrate or the like. The guide 12 may be a surface of a substratewhich is subjected to hydrophilic or hydrophobic treatment. For example,although the surface of silicon is hydrophobic, when the surface of thesilicon is oxidized to form a silicon oxide film, the surface hashydrophilic properties.

In the mixture 20, the metal particles 22 are dispersed in the polymers24. The metal particles 22 are low-resistance metal such as gold (Au),copper (Cu), silver (Ag), or alloys containing these materials.Moreover, the metal particles 22 may be made from carbon nanotubes.Furthermore, the metal particles 22 are low-melting point metal such astin (Sn), indium (In), or alloys containing these materials. The metalparticles 22 are nanoparticles, for example, and have a diameter ofapproximately 1 nm to 100 nm. A number of metal particles 22 dispersedin the mixture 20 may be made from one kind of metal and may be madefrom a plurality of kinds of metal, and metal particles and carbonnanotubes may be mixed together. The content of the metal particles 22in the mixture 20 is preferably between 1 and 50 vol. %.

As examples of the polymers 24, addition polymerization-type polymerssuch as styrene-based polymers, (meth)acrylic ester-based polymers,vinyl-based polymers, or diene-based polymers can be used. Furthermore,polycondensation-type polymers such as urea-based polymers, imide-basedpolymers, or amide-based polymers can be used. Furthermore,polyaddition-type polymers such as urethane-based polymers, epoxy-basedpolymers, or benzocyclobutenes can be used. Moreover, mixtures thereofcan be used.

More specifically, the polymers 24 are organic polymers such aspolystyrene (PS) or polymethylmethacrylate (PMMA), for example.Moreover, as examples of the polymers 24, polyolefins (for example,polyethylene or polypropylene), polyalkylene oxides (for example,polyethylene oxides), polypropylene oxides, polybutylene oxides,polyethers, poly(meth)acrylates, polystyrenes, polyesters,polyorganosiloxanes, polyorganogermanes, or mixtures thereof can beused.

As the polymers 24, those exemplified in Patent Documents 1 and 2 orother polymers other than those described above can be used. Thepolymers 24 may contain particles such as fillers. The particlescontained in the polymers 24 are inorganic insulating materials having alow thermal expansion coefficient such as silicon oxides, for example.When the guide 12 is hydrophilic, the polymers 24 preferably contain atleast hydrophilic polymers. When the guide 12 is hydrophobic, thepolymers 24 preferably contain at least hydrophobic polymers. Thehydrophilic or hydrophobic properties of polymers can be controlled bythe presence of polarization and a hydrophilic or hydrophobic group ofthe polymers 24 and/or the molecular weight or the like of the polymers24.

A contact angle is broadly used as an indicator indicating thehydrophilic and hydrophobic properties. That is, the smaller the contactangle, the higher the hydrophilic properties, whereas the larger thecontact angle, the higher the hydrophobic properties. For example, thecontact angle of the polymer examples of the polymers 24 isapproximately 90 degrees for styrene-based polymers, approximately 70degrees for (meth)acrylic ester-based polymers, approximately 90 degreesfor vinyl-based polymers, approximately 80 degrees for urea-basedpolymers, 75 to 90 degrees for imide-based polymers, 50 to 70 degreesfor amide-based polymers, 80 to 95 degrees for urethane-based polymers,approximately 90 degrees for epoxy-based polymers, and approximately 90degrees for benzocyclobutenes. In the present specification,“hydrophilic” and “hydrophobic” merely represents relative properties.

As illustrated in FIGS. 1(c) and 1(d), the mixture 20 is subjected to aheat treatment. In this way, the metal particles 22 and the polymers 24are phase-separated. In this case, the polymers 24 agglomerate to theguide 12. In this way, polymer layers 16 that make contact with theguide 12 are formed from the agglomerated polymers 24. Since thepolymers 24 agglomerate to the guide 12, the metal particles 22agglomerate away from the guide 12. In this way, metal columns 14 spacedfrom the guide 12 with the polymer layers 16 interposed therebetween areformed from the agglomerated metal particles 22. In this manner, thepolymers 24 and the metal particles 22 are self-organized and the metalcolumns 14 are formed in the polymer layers 16. The metal columns 14extend in a stretching direction of the guide 12. When the guide 12 ishydrophilic and the polymers 24 contain hydrophilic polymers, thepolymers 24 are likely to agglomerate so as to make contact with theguide 12. In this way, a region of the polymer layer 16 making contactwith the guide 12 is hydrophilic. When the guide 12 is hydrophobic andthe polymers 24 contain hydrophobic polymers, the polymers 24 are likelyto agglomerate so as to make contact with the guide 12. In this way, aregion of the polymer layer 16 making contact with the guide 12 ishydrophobic. In this manner, in order to allow the polymers 24 toagglomerate so as to make contact with the guide 12 and to efficientlyform the metal columns 14 in the polymer layers 16, it is preferablethat the contact angle of the polymers 24 is similar to the contactangle of the material of the guide 12.

Melted metal has higher polarizability than hydrophilic polymers.Polymers having high polarizability have high hydrophilic properties,and substance having high hydrophilic properties are easilyphase-separated from substance having low hydrophilic properties.Therefore, hydrophobic polymers are more easily phase-separated frommelted metal than hydrophilic polymers. Therefore, when the metalparticles 22 melt, it is preferable that the guide 12 has hydrophobicproperties and the polymers 24 contain hydrophobic polymers. Moreover,the hydrophilic guide 12 can be easily formed using an inorganicinsulating film or the like. Therefore, the guide 12 may be hydrophilicand the polymers 24 may contain hydrophilic polymers.

In semiconductor devices formed in this manner, the polymer layer 16surrounds the metal column 14 from a direction crossing the stretchingdirection. The guide 12 is spaced from the metal column 14 with thepolymer layer 16 interposed therebetween and surrounds the polymer layer16 from the direction crossing the stretching direction. The guide 12may not be formed so as to surround the polymer layer 16 completely.That is, in FIG. 1(c), a portion of the guide that surrounds the polymerlayer 16 may be hydrophobic and another portion may be hydrophilic. InFIG. 1(d), a portion of the guide that surrounds the polymer layer 16may be hydrophobic and another portion may be hydrophilic.

According to Embodiment 1, the polymers 24 agglomerate to the guide 12to form the polymer layers 16, and the metal particles 22 agglomerateaway from the guide 12 to form the metal columns 14. In this way, themetal columns 14 are formed to be spaced from the guide 12. Therefore,it is possible to decrease the diameter of the metal columns 14 and/orthe interval of the metal columns 14. In this manner, miniaturization ofthe metal columns 14 is realized. By miniaturizing the metal columns 14,it is possible to reduce the capacitance of the wires. The diameter andthe interval of the metal columns 14 can be set between 0.1 μm and 10μm, for example. For miniaturization of the metal columns 14, thediameter and the interval of the metal columns 14 are preferably equalto or smaller than 1 μm. The height of the metal columns 14 can be setbetween 1 μm and 100 μm, for example. For example, it is possible toform the metal columns 14 having an aspect ratio of 10 or larger.

The heat treatment temperature may be set to such a temperature that themetal particles 22 and the polymers 24 are phase-separated. For example,the heat treatment temperature can be set between 150° C. and 300° C.More preferably, the heat treatment temperature is between 200° C. and250° C. In order to realize phase-separation, the heat treatmenttemperature is preferably higher than the melting point of the polymers24.

A material having a lower melting point than the heat treatmenttemperature (for example, a material having a lower melting point thanthe polymers 24) can be used as the metal particles 22. In this case,when the heat treatment temperature is higher than the melting point ofthe metal particles 22, the metal columns 14 melt. Due to this, fineholes are not formed in the metal columns 14. In order to melt the metalparticles 22, the melting point of the metal columns 14 is preferablyequal to or lower than the melting point of the polymer layer 16 but maybe higher than the melting point of the polymer layer 16. When amaterial having a higher melting point than the heat treatmenttemperature is used as the metal particles 22, the metal columns 14 formmulti-particle bodies having fine holes in which the metal particles 22agglomerate and make contact with each other.

Embodiment 2

Embodiment 2 is an example in which a mixture of hydrophilic polymersand hydrophobic polymers is used as the polymers 24. FIGS. 2(a) and 2(b)are diagrams illustrating a method for forming metal columns accordingto Embodiment 2. FIG. 2(a) is a plan view and FIG. 2(b) is across-sectional view taken along A-A in FIG. 2(a). In FIGS. 2(a) and2(b) of Embodiment 2, a mixture of hydrophilic polymers and hydrophobicpolymers is used as the polymers 24. Hydrophobic polymers havehydrophobic properties as compared to hydrophilic polymers. Thehydrophilic polymers and the hydrophobic polymers are polymers that donot mix with each other. The hydrophilic polymers and the hydrophobicpolymers can be appropriately selected according to the presence ofpolarization and a hydrophilic or hydrophobic group of the polymers 24and/or the molecular weight or the like of the polymers.

As illustrated in FIGS. 2(a) and 2(b), when the mixture is subject to aheat treatment, the hydrophilic polymers, the hydrophobic polymers, andthe metal particles are phase-separated. When the guide 12 ishydrophilic, the hydrophilic polymers agglomerate to the guide 12, and afirst polymer layer 16 a formed close to the guide 12 is a hydrophilicpolymer layer. The hydrophobic polymers agglomerate away from the guide12, and a second polymer layer 16 b which is a hydrophobic polymer layeris formed on an inner side of the first polymer layer 16 a. The metalparticles 22 agglomerate to the inner side of the hydrophobic polymersand the metal column 14 is formed on the inner side of the secondpolymer layer 16 a. When the guide 12 is hydrophobic, the hydrophobicpolymers agglomerate to the guide 12 and the hydrophilic polymersagglomerate away from the guide 12. In this way, configurations otherthan the configuration in which the first polymer layer 16 a is ahydrophobic polymer layer and the second polymer layer 16 b is ahydrophilic polymer layer are the same as those of Embodiment 1, and thedescription thereof will be omitted.

FIGS. 3(a) and 3(b) are diagrams illustrating a method for forming metalcolumns according to Modification 1 of Embodiment 2. FIG. 3(a) is a planview and FIG. 3(b) is a cross-sectional view taken along A-A in FIG.3(a). In Modification 1 of Embodiment 2, as illustrated in FIGS. 3(a)and 3(b), the metal column 14 is formed on the inner side of the firstpolymer layer 16 a. The second polymer layer 16 b is formed on the innerside of the metal column 14. In this manner, the metal column 14 isformed between the first polymer layer 16 a and the second polymer layer16 b in a ring form. The other configuration is the same as Embodiment2, and the description thereof will be omitted.

FIGS. 4(a) and 4(b) are diagrams illustrating a method for forming metalcolumns according to Modification 2 of Embodiment 2. FIG. 4(a) is a planview and FIG. 4(b) is a cross-sectional view taken along A-A in FIG.4(a). In Modification 2 of Embodiment 2, as illustrated in FIGS. 4(a)and 4(b), a plurality of metal columns 14 is formed between the firstpolymer layer 16 a and the second polymer layer 16 b. The otherconfiguration is the same as Modification 1 of Embodiment 2, and thedescription thereof will be omitted.

According to Embodiment 2 and the modifications thereof, the polymers 24contain hydrophilic polymers and hydrophobic polymers. Due to this, whenthe guide 12 is hydrophilic, the hydrophilic polymers agglomerate to theguide 12 and the hydrophobic polymers agglomerate away from the guide 12during a heat treatment. Therefore, the first polymer layer 16 a is ahydrophilic polymer layer and the second polymer layer 16 b is ahydrophobic polymer layer. When the guide 12 is hydrophobic, the firstpolymer layer 16 a is a hydrophobic polymer layer and the second polymerlayer 16 b is a hydrophilic polymer layer. In this manner, whenhydrophilic polymers and hydrophobic polymers are phase-separated, sincethe metal particles 22 are also phase-separated, the metal particles 22agglomerate more easily than Embodiment 1. Therefore, it is possible toform the metal columns 14 with high accuracy.

When the metal particles 22 melt, melted metal is more easilyphase-separated from hydrophobic polymers than hydrophilic polymers.Therefore, the guide 12 is preferably hydrophilic and the first polymerlayer 16 a is preferably a hydrophilic polymer layer. Due to this, themetal columns 14 are formed by phase-separation between hydrophobicpolymers and melted metal. Therefore, it is possible to form the metalcolumns 14 with higher accuracy.

As with Embodiment 2, the metal columns 14 may be provided on the innerside of the second polymer layer 16 b. In this way, it is possible todecrease the diameter of the metal columns 14. As with Modification 1 ofEmbodiment 2, the metal column 14 may be provided between the firstpolymer layer 16 a and the second polymer layer 16 b in a ring form. Aswith Modification 2 of Embodiment 2, a plurality of metal columns 14 maybe provided between the first polymer layer 16 a and the second polymerlayer 16 b. In this way, it is possible to further decrease the intervalof the metal columns 14.

Which one of Embodiment 2 and the modifications thereof will be selectedcan be appropriately set according to the material and/or the particlesize, and the heat treatment conditions of the metal particles 22 suchas the material and/or the molecular content of the hydrophilic polymersand the hydrophobic polymers. For example, when the hydrophobic polymershave weak hydrophobic properties, such metal columns 14 as described inEmbodiment 2 can be formed. When the hydrophobic polymers have stronghydrophobic properties, such metal columns 14 as described inModification 1 of Embodiment 2 can be formed. By forming a plurality ofelectrodes which serves as seeds on the mixture 20, it is possible toform such metal columns 14 as described in Modification 2 of Embodiment2.

Embodiment 3

Embodiment 3 is an example of forming a plurality of metal columns 14 inthe guide 12 and is an example of a via-middle method. FIGS. 5(a) to5(e) are diagrams illustrating a method for forming metal columnsaccording to Embodiment 3. FIGS. 5(a) and 5(c) are plan views, FIGS.5(b) and 5(d) are cross-sectional views taken along A-A in FIGS. 5(a)and 5(c), respectively, and FIG. 5(e) is a cross-sectional viewcorresponding to the cross-sectional views taken along A-A of FIGS. 5(a)and 5(c).

As illustrated in FIGS. 5(a) and 5(b), a mixture 20 is filled in a guide12. As illustrated in FIGS. 5(c) and 5(d), an insulating film 26 havinga plurality of openings is formed on the guide 12 and the mixture 20.The insulating film 26 is an inorganic insulating film such as siliconoxides or silicon nitrides or an organic insulating film such as aresin, for example. A plurality of electrodes 28 is formed so as to makecontact with the mixture 20 through the plurality of openings of theinsulating film 26. The electrode 28 is a metal layer such as gold,copper, nickel (Ni), or titanium (Ti), for example. The mixture 20 maybe filled in the guide 12 after the insulating film 26 and the electrode28 are formed.

As illustrated in FIG. 5(e), the mixture 20 is subjected to a heattreatment. The metal particles 22 agglomerate using the plurality ofelectrodes 28 as seeds to form a plurality of metal columns 14. Theother configuration is the same as Embodiment 1, and the descriptionthereof will be omitted.

According to Embodiment 3, a plurality of metal columns 14 is formed inthe guide 12. In this way, even when the guide 12 is miniaturized,miniaturization of the metal columns 14 can be realized. Particularly,it is possible to decrease the interval of the metal columns 14. Thearrangement of the metal columns 14 can be set arbitrarily according tothe arrangement of the electrodes 28.

Moreover, since the electrodes are in contact with the mixture 20, aplurality of metal columns 14 are formed so as to make contact with theplurality of electrodes 28, respectively. Since the insulating film 26is formed between the electrodes 28 so as to make contact with themixture 20, the metal column 14 is not formed between the electrodes 28.Due to this, it is possible to further decrease the interval of theplurality of metal columns 14.

When the metal column 14 is metal having a low melting point such as tinor indium, the electrode 28 is preferably formed of a material having ahigher melting point than the metal column 14 so that the electrode 28does not melt during a heat treatment. The electrode 28 is preferablynickel so that the electrode functions as a seed of tin or indium. Whenthe metal column 14 is metal having a high melting point such as gold orsilver, since the electrode 28 does not melt during a heat treatment,the electrodes 28 may be the same material as the metal column 14.

When the electrode 28 is used as a seed when forming the metal column14, the guide 12 may not be provided. Moreover, the hydrophilic orhydrophobic properties of the guide 12 may not correspond to that of thepolymers.

Embodiment 4

Embodiment 4 is an example in which the metal column 14 is used as apenetration electrode that passes through a semiconductor substrate andis an example of a via-last method. FIGS. 6(a) to 6(e) arecross-sectional views illustrating a method for manufacturingsemiconductor devices according to Embodiment 4.

As illustrated in FIG. 6(a), transistor regions 40 including transistorand the like are formed on the semiconductor substrate 10. Thesemiconductor substrate 10 is a single crystal silicon substrate, forexample. Electrodes 34 are formed on the semiconductor substrate 10. Theelectrodes 34 are metal layers such as copper layers or nickel layers,for example. A multilayer wiring 32 is formed on the semiconductorsubstrate 10. The multilayer wiring 32 is a structure in which aplurality of insulating layers and a plurality of wiring layers arealternately stacked. The insulating layer is a silicon oxide layer, forexample, and the wiring layer is a conductive layer such as a copperlayer. The multilayer wiring 32 and the transistors and the like in thetransistor regions 30 form a circuit. Electrodes 38 are formed on themultilayer wiring 32. The electrodes 38 are conductive layers such ascopper layers. The electrodes 38 and 34 are electrically connected bywirings 36 in the multilayer wiring 32. Bumps and the like may be formedon the electrode 38. The electrodes 34 may be electrically connected tothe transistors in the transistor regions 30.

As illustrated in FIG. 6(b), the lower surface of the semiconductorsubstrate 10 is ground. In this way, the semiconductor substrate 10 isthinned to a thickness between approximately 10 μm and 100 μm, forexample.

As illustrated in FIG. 6(c), holes 18 are formed so as to pass throughthe semiconductor substrate 10 from the lower surface of thesemiconductor substrate 10. The holes 18 are formed using a deepreactive ion etching (RIE) method. The guide 12 is formed on the innersurface of the hole 18. The diameter of the hole 18 is between 1 μm and10 μm, for example. For example, the semiconductor substrate 10 isthermally oxidized to form the guide 12 formed of a silicon oxide film.An insulating film such as a silicon oxide film may be formed as theguide 12 using a chemical vapor deposition (CVD) method, for example. Inthis way, the guide 12 having hydrophilic properties is formed.Moreover, an organic insulating film such as polymers may be formed onthe inner surface of the hole 18 as the guide 12. For example, the guide12 of hydrophobic polyimide can be formed by polymerizing pyromelliticdianhydride (PMDA) and oxydianiline (ODA).

As illustrated in FIG. 6(d), the polymer layer 16 and the metal column14 are formed in the hole 18 using the method for forming metal columnsaccording to Embodiments 1 and 2 and the modifications thereof. Asillustrated in FIG. 6(e), electrodes 40 electrically connected to themetal columns 14 are formed on the lower surface of the semiconductorsubstrate 10. The electrodes 40 are metal layers such as copper layers,for example. The metal columns 14 function as penetration electrodesthat electrically connect the electrodes 34 and 40. The diameter of themetal column 14 is between 0.1 μm and several μm, for example.

Modification 1 of Embodiment 4 is an example of a via-middle method.FIGS. 7(a) to 7(e) are cross-sectional views illustrating a method formanufacturing semiconductor devices according to Modification 1 ofEmbodiment 4. As illustrated in FIG. 7(a), the transistor regions 30 areformed on the upper surface of the semiconductor substrate 10.

As illustrated in FIG. 7(b), the holes 18 are formed from the uppersurface of the semiconductor substrate 10. The guide 12 is formed in theinner surface of the hole 18. As illustrated in FIG. 7(c), the polymerlayer 16 and the metal column 14 are formed in the holes 18 using themethod for forming metal columns according to Embodiments 1 and 2 andthe modifications thereof. As illustrated in FIG. 7(d), the electrodes34, the multilayer wiring 32, and the electrodes 38 are formed on theupper surface of the semiconductor substrate 10. As illustrated in FIG.7(e), the lower surface of the semiconductor substrate 10 is ground sothat the metal columns 14 are exposed. The electrodes 40 electricallyconnected to the metal columns 14 are formed on the lower surface of thesemiconductor substrate 10. The other configuration is the same asEmbodiment 4, and the description thereof will be omitted.

Modification 2 of Embodiment 4 is an example of forming a plurality ofmetal columns 14 in the hole 18. FIGS. 8(a) to 8(d) are cross-sectionalviews illustrating a method for manufacturing semiconductor devicesaccording to Modification 2 of Embodiment 4. As illustrated in FIG.8(a), transistor regions 30 are formed on the upper surface of thesemiconductor substrate 10 and the multilayer wiring 32 is formed on theupper surface of the semiconductor substrate 10. The wirings 36 in themultilayer wiring 32 electrically connect the electrodes 34 and 38. Theplurality of electrodes 34 are formed on the upper surface of thesemiconductor substrate 10 so as to be adjacent to each other.

As illustrated in FIG. 8(b), the lower surface of the semiconductorsubstrate 10 is ground. Holes 18 that pass through the semiconductorsubstrate 10 are formed from the lower surface of the semiconductorsubstrate 10 so that the plurality of adjacent electrodes 34 areexposed. The guide 12 is formed on the inner surface of the hole 18.

As illustrated in FIG. 8(c), a plurality of metal columns 14 and aplurality of polymer layers 16 are formed in the hole 18 using themethod for forming metal columns according to Embodiment 3. The metalcolumns 14 are formed so as to make contact with the electrodes 34. Themetal columns 14 can be formed in an arbitrary arrangement by settingthe arrangement of the electrodes 34. As illustrated in FIG. 8(d), theelectrodes 40 that make contact with the metal columns 14 are formed.The interval of the metal columns 14 is between 0.1 μm and several μm,for example. The other configuration is the same as Embodiment 4, andthe description thereof will be omitted.

According to Embodiment 4 and the modification thereof, the hole 18 thatserves as the through-hole that passes through the semiconductorsubstrate 10 is formed as illustrated in FIGS. 6(c), 7(b), and 8(b). Theinput interface as the guide 12 is formed on the inner surface of thehole 18 as illustrated in FIGS. 6(c), 7(b), and 8(b). A mixture isfilled in the hole 18 as illustrated in FIGS. 6(d), 7(c), and 8(c).After that, the metal columns 14 as the penetration electrodes that passthrough the polymer layer 16 are formed using Embodiments 1 and 3 andthe modifications thereof.

When the penetration electrodes that pass through the semiconductorsubstrate 10 are formed, it is difficult to form fine penetrationelectrodes having a high aspect ratio at a low cost. For example, aninsulating film is formed in the hole. The insulating film is maderelatively thick to suppress short-circuiting between the penetrationelectrode and the semiconductor substrate. A barrier layer and a seedlayer are formed in the insulating film. After that, the penetrationelectrodes are formed using a plating method. In this method, the numberof manufacturing steps increases and the manufacturing cost increases.Moreover, it is difficult to form the insulating film, the barrierlayer, and the seed layer in a hole having a high aspect ratio.

In Embodiment 4 and the modification thereof, the polymer layer 16functions as an insulating film for suppressing short-circuiting betweenthe penetration electrode and the semiconductor substrate, and the guide12 is used for making the inner surface of the hole 18 hydrophilic orhydrophobic. Due to this, the insulating film used as the guide 12 maybe thin. The polymer layer 16 can be made thick to form the polymerlayer 16 by self-organization. Since the polymer layer 16 can be madethick, it is possible to increase the aspect ratio of the penetrationelectrode as compared to the aspect ratio of the hole 18. In this way,it is possible to form fine penetration electrodes having a high aspectratio at a low cost.

It is not desirable that heat at which the polymer layer 16 melts isapplied after the metal columns 14 are formed. For example, it is notdesirable that heat of 300° C. or higher is applied to the polymer layer16. In Embodiment 4, the metal columns 14 are formed after themultilayer wiring 32 is formed. Due to this, heat of a highertemperature can be applied than Modification 1 of Embodiment 4 in thestep of forming the multilayer wiring 32.

In Modification 2 of Embodiment 4, a plurality of metal columns 14 isformed in the hole 18. Therefore, it is possible to reduce the intervalof the penetration electrodes. A method of forming a plurality of metalcolumns 14 in the hole 18 may be applied to a via-middle method.

In Embodiment 4 and Modification 2 thereof, since the electrode 34serves as a seed when forming the metal column 14, it is not necessaryto provide the guide 12. Moreover, the hydrophilic or hydrophobicproperties of the guide 12 may not correspond to that of the polymers.

Embodiment 5

Embodiment 5 is an example in which metal columns 14 are used asmicro-bumps that connects substrates of stacked semiconductor chips orthe like. FIGS. 9(a) to 9(c), FIGS. 10(a) and 10(b), and FIG. 11 arecross-sectional views illustrating a method for manufacturingsemiconductor devices according to Embodiment 5.

As illustrated in FIG. 9(a), a semiconductor chip 11 includes asemiconductor substrate 10, a multilayer wiring 32, and electrodes 38. Atransistor region 30 is formed on an upper surface of the semiconductorsubstrate 10. The multilayer wiring 32 is formed on the semiconductorsubstrate 10. The electrodes 38 are formed on the multilayer wiring 32.A penetration electrode that passes through the semiconductor substrate10 may be provided.

As illustrated in FIG. 9(b), guides 12 are formed on the semiconductorchip 11. The guide 12 is an insulating film, for example, and is aninorganic insulator of a silicon oxide film or the like or an organicinsulator of a resin or the like. At least a side surface of the guide12 is hydrophilic or hydrophobic. The guide 12 is formed so as tosurround the electrode 38.

As illustrated in FIG. 9(c), a mixture 20 is formed on the semiconductorchip 11. The mixture 20 is formed so as to cover the guides 12.

As illustrated in FIG. 10(a), semiconductor chips 11 a and 11 b aredisposed so that the mixtures 20 face each other. The semiconductorchips 11 a and 11 b are the semiconductor chip 11 illustrated in FIG.9(c), for example. In this way, a plurality of electrodes 38 aredisposed on the facing surfaces of the semiconductor chips 11 a and 11b. As illustrated in FIG. 10(b), the mixtures 20 of the semiconductorchips 11 and 11 b are brought into contact with each other.

As illustrated in FIG. 11, a heat treatment is performed so thatpolymers agglomerate to the guide 12 to form a polymer layer 16. Metalparticles agglomerate using the electrodes 38 as seeds to form metalcolumns 14 that connect the electrodes 38. The metal columns 14electrically connect the semiconductor chips 11 a and 11 b. The diameterand the interval of the metal columns 14 are between 0.1 μm and 10 μm,for example. The height of the metal columns 14 is between 1 μm andseveral tens of μm, for example.

According to Embodiment 5, as illustrated in FIG. 10(a), thesemiconductor chip 11 b as a second substrate is disposed on thesemiconductor chip 11 a as a first substrate. As illustrated in FIG. 11,the metal columns 14 as bumps that electrically connect thesemiconductor chips 11 a and 11 b are formed using Embodiments 1 and 3and the modifications thereof. Specifically, the metal columns 14connect the plurality of electrodes 38 of the semiconductor chip 11 aand the plurality of electrodes 38 of the semiconductor chip 11 b.

In the method of Non-Patent Document 1, it is difficult to decrease theelectrode interval so that no bump is formed between adjacentelectrodes. In Embodiment 5, since the guide 12 is provided, it ispossible to form the metal columns 14 even when the interval of theelectrodes 38 is small. Therefore, it is possible to realizeminiaturization of bumps.

In Embodiment 5, although the guide 12 is provided in both semiconductorchips 11 a and 11 b, the guide 12 may be provided in at least one of thesemiconductor chips 11 a and 11 b. Moreover, although the mixture 20 isfilled in both semiconductor chips 11 a and 11 b, the mixture 20 may beformed in at least one surface of the semiconductor chips 11 a and 11 band the mixture 20 may be filled in the guide 12 formed in at least onesurface of the semiconductor chips 11 a and 11 b.

In Embodiment 5, although the semiconductor chips 11 a and 11 b aredescribed as examples of the first and second substrates, respectively,at least one of the first and second substrates may be an interposer andmay be a wiring substrate.

Embodiment 6

Embodiment 6 is an example in which a semiconductor chip includes adetection circuit and a switching circuit. FIG. 12 is an example of analignment error occurring in Embodiment 5. As illustrated in FIG. 5,when the semiconductor chips 11 a and 11 b are disposed to face eachother in Embodiment 5, alignment may deviate. In Embodiment 5, it ispossible to decrease the pitch of the metal columns 14. For example, thepitch of the electrodes 38 can be set to be equal to or smaller than 1μm. On the other hand, the alignment accuracy of the semiconductor chips11 a and 11 b is several μm, for example. Therefore, when an alignmenterror occurs, electrodes 38 different from the electrodes 38 which areto be connected are electrically connected by the metal column 14.Embodiment 6 solves such a problem.

FIG. 13 is a block diagram of a semiconductor device according toEmbodiment 6. Semiconductor chips 11 a and 11 b include detectioncircuits 50 a and 50 b, switching circuits 52 a and 52 b, and internalcircuits 54 a and 54 b, respectively. The detection circuits 50 a and 50b, the switching circuits 52 a and 52 b, and the internal circuits 54 aand 54 b include an electronic circuit formed by the transistors in thetransistor region 30 and the multilayer wiring 32. A plurality ofelectrodes 38 a and 38 b and the detection circuits 50 a and 50 b areelectrically connected by a plurality of wirings 60 a and 60 b,respectively. The detection circuits 50 a and 50 b and the switchingcircuits 52 a and 52 b are electrically connected by a plurality ofwirings 62 a and 62 b, respectively. The switching circuits 52 a and 52b and the internal circuits 54 a and 54 b are electrically connected bya plurality of wirings 64 a and 64 b, respectively. The plurality ofelectrodes 38 a of the semiconductor chip 11 a and the plurality ofelectrodes 38 b of the semiconductor chip 11 b are electricallyconnected by a plurality of metal columns 14, respectively.

The internal circuits 54 a and 54 b are circuits (first and secondcircuits) that realize the original functions of semiconductor chips andare electrically connected via the electrodes 38 a and 38 b and thewirings 60 a and 60 b to 64 a and 64 b, respectively. The detectioncircuits 50 a and 50 b detect an electrode 38 b of the plurality ofelectrodes 38 b to which at least one electrode 38 a of the plurality ofelectrodes 38 a is connected. The switching circuits 52 a and 52 bswitch at least one of the connection between the internal circuit 54 aand the plurality of electrodes 38 a and the connection between theinternal circuit 54 b and the plurality of electrodes 38 b on the basisof the detection results of the detection circuits 50 a and 50 b.

An example in which a boundary scan circuit is used as the detectioncircuits 50 a and 50 b will be described. FIG. 14 is a block diagramillustrating an example of a detection circuit according to Embodiment6. The switching circuits 52 a and 52 b are not illustrated. Although acase in which signals are output from the semiconductor chip 11 a to thesemiconductor chip 11 b is described, the same is true for a case inwhich signals are output from the semiconductor chip 11 b to thesemiconductor chip 11 a.

As illustrated in FIG. 14, the semiconductor chips 11 a and 11 b includedetection circuits 50 a and 50 b and internal circuits 54 a and 54 b,respectively. The detection circuits 50 a and 50 b include boundary scan(BS) circuits 72 a and 72 b, buffers 74 a and 74 b, and control circuits76 a and 76 b, respectively.

The BS circuit 72 a outputs signals output by the internal circuit 54 ato the buffer 74 a during the operation of the internal circuit 54 a onthe basis of an instruction from the control circuit 76 a and outputs aboundary scan signal input from the adjacent BS circuit 72 a to anotherBS circuit 72 a in synchronization with clocks during boundary scan. Thebuffer 74 a adjusts the level or the like of the signals output from theBS circuit 72 a and outputs the signals to the electrodes 38 a.

The BS circuit 72 b outputs signals output by the internal circuit 54 bto the buffer 74 b during the operation of the internal circuit 54 b onthe basis of an instruction from the control circuit 76 b and outputs aboundary scan signal input from the adjacent BS circuit 72 b to anotherBS circuit 72 b in synchronization with clocks during boundary scan. Thebuffer 74 b adjusts the level or the like of the signals output from theBS circuit 72 b and outputs the signals to the electrodes 38 b.

The control circuits 76 a and 76 b control the BS circuits 72 a and 72 band perform boundary scan. Boundary scan signals propagate through thewirings 78 a and 78 b. The signals propagating between the internalcircuits 54 a and 54 b are input to or output from the electrodes 38 aand 38 b. The electrodes 38 a and 38 b are electrically connected by themetal columns 14. The boundary scan signals are input to or output fromelectrodes 38 c and 38 d which are connected by the metal columns 14.Control signals propagating between the control circuits 76 a and 76 bare input to or output from the electrodes 38 e and 38 f which areconnected by the metal columns 14.

The control circuits 76 a and 76 b perform boundary scan whereby whichelectrode 38 b of the plurality of electrodes 38 b is connected to atleast one electrode 38 a of the plurality of electrodes 38 a.

Due to an alignment error between the semiconductor chips 11 a and 11 b,when the electrodes 38 c and 38 d are not connected and/or theelectrodes 38 e and 38 f are not connected, boundary scan cannot beperformed. Therefore, even when the semiconductor chips 11 a and 11 bare misaligned, the electrodes 38 c and 38 d are connected and theelectrodes 38 e and 38 f are connected. For example, a plurality ofelectrodes 38 c to 38 f is provided. Alternatively, the area of theelectrodes 38 c to 38 f is increased. In this way, even when thesemiconductor chips 11 a and 11 b are bonded in a misaligned state, atleast one of the plurality of electrodes 38 c is connected to at leastone of the plurality of electrodes 38 d. The same is true for theelectrodes 38 e and 38 f.

FIGS. 15 and 16 are block diagrams for describing an example of anoperation of a semiconductor device according to Embodiment 6. Thedetection circuit 50 is not illustrated. As illustrated in FIGS. 15 and16, the switching circuits 52 a and 52 b include a plurality of switches66 a and 66 b that switch the connection between a plurality of wirings62 a and 62 b and a plurality of wirings 64 a and 64 b. The switches 66a and 66 b can arbitrarily connect or disconnect terminals A to Hconnected to the plurality of wirings 62 a and 62 b and terminals a to hconnected to the plurality of wirings 64 a and 64 b, respectively.

In FIG. 15, the electrodes 38 a and 38 b which are to be connected areconnected by the metal column 14 without any shift. The switches 66 aand 66 b connect the terminals A to H to the terminals a to h,respectively. In this way, the internal circuits 54 a and 54 b areelectrically connected in such a connection relation as intended.

In FIG. 16, the electrodes 38 a and 38 b are connected in a shiftedstate. In the example of FIG. 16, the electrodes 38 b are connected tothe electrodes 38 a so as to be shifted to the left by two electrodes.The switching circuit 52 a connects the terminals A to F to theterminals b to g, respectively. The switching circuit 52 b connects theterminals C to H to the terminals b to g, respectively. In this way, theinternal circuits 54 a and 54 b are electrically connected in such aconnection relation as intended. The wirings 64 a and 64 b at both endsof the internal circuits 54 a and 54 b are dummy wirings.

According to Embodiment 6, the detection circuits 50 a and 50 b detect aconnection relation between the electrodes 38 a and 38 b, and theswitching circuits 52 a and 52 b switches at least one of the connectionbetween the internal circuit 54 a and the electrode 38 a and theconnection between the internal circuit 54 b and the electrode 38 b. Inthis way, when the alignment accuracy of the semiconductor chips 11 aand 11 b is larger than the pitch of the electrodes 38 a and 38 b, evenif the connection between the electrodes 38 a and 38 b shifts from anintended connection relation, it is possible to connect the internalcircuits 54 a and 54 b in an intended connection relation.

When the alignment between the semiconductor chips 11 a and 11 b isshifted in parallel without incurring rotation, the direction and theamount of the shift between the electrodes 38 a and 38 b are the samefor all electrodes 38 a and 38 b. Due to this, for example, when theelectrodes 38 a and 38 b are arranged at the same pitch, the switchingcircuits 52 a and 52 b may switch the connection so that the connectionbetween the electrodes 38 a and 38 b is shifted in the same directionand by the same amount. Moreover, the detection circuits 50 a and 50 bmay detect the electrode 38 b to which one electrode 38 a is connected.In this way, the direction and the amount of the shift between theelectrodes 38 a and 38 b are determined.

Any one of the detection circuits 50 a and 50 b may not be provided. Anyone of the switching circuits 52 a and 52 b may not be provided.

Although a case in which the semiconductor chips 11 a and 11 b arestacked using the method of Embodiment 5 has been described as anexample in Embodiment 6, the detection circuits 50 a and 50 b and theswitching circuits 52 a and 52 b may be applied when the semiconductorchips 11 a and 11 b are stacked by another method.

Embodiment 7

Embodiment 7 is an example for forming metal columns extending in ahorizontal direction. FIGS. 17(a) and 17(b) are diagrams illustrating amethod for forming metal columns 14 according to Embodiment 7. FIG.17(a) is a plan view and FIG. 17(b) is a cross-sectional view takenalong A-A in FIG. 17(a). As with Embodiment 1, a mixture containingmetal particles and polymers is filled between a pair of guides 12provided on a surface of a substrate so as to extend in a horizontaldirection. After that, as illustrated in FIGS. 17(a) and 17(b), themixture is subjected to a heat treatment so that the metal particles andthe polymers are phase-separated.

In this case, the polymers agglomerate to the guides 12 to form a pairof polymer layers 16, and the metal particles agglomerate away from theguides 12 to form a metal column 14 between the polymer layers 16. Thepolymer layers 16 and the metal column 14 stretch in a horizontaldirection along the stretching direction of the guides 12. The otherconfiguration is the same as Embodiment 1 and the description thereofwill be omitted. In this manner, according to a method for manufacturingsemiconductor devices of the embodiment of the present invention, it ispossible to form the metal column 14 extending in the horizontaldirection as well as the metal column 14 extending in the verticaldirection. Moreover, by bending the guides 12 in advance to the right orleft side, it is possible to form the metal columns 14 that bend in theright or left direction as well as extending straightly.

Embodiment 8

Embodiment 8 is an example illustrating a method of narrowing theinterval of metal wirings. FIGS. 18 and 19 are cross-sectional viewsillustrating a method for forming metal columns 14 according toEmbodiment 8. As illustrated in FIG. 18(a), a pair of guides 12 formedof silicon oxides or the like is provided on a surface of a substrate 80and a thin metal film 82 is formed so as to cover the surface of thesubstrate 80 and the surface of the guides 12. Furthermore, a thin guidelayer 84 of the same material as the guides 12 is formed on the metalfilm 82 in an intermediate portion of the guides 12 at an interval fromthe guides 12. As with Embodiment 1, the mixture 20 containing metalparticles 22 and polymers 24 is filled on the metal film 82 and theguide layer 84 on the inner side of the guides 12. In this case, themetal particles 22 and the metal film 82 are preferably formed of thesame type of metal or metal having a similar contact angle.

After that, as illustrated in FIG. 18(b), the mixture 20 is subjected toa heat treatment so that the metal particles 22 and the polymers 24 arephase-separated. In this case, the metal particles 22 agglomerate to theguides 12 to which the metal film 82 is exposed to form a pair of metalcolumns 14, and the polymers 24 agglomerate in the range of the guidelayer 84 between the metal columns 14 to form the polymer layer 16. Themetal film 82 exposed to the surface of the guides 12 and the metal film82 under the polymer layer 16 are removed, whereby the metal columns 14separated from each other can be formed. In this way, it is possible toform the metal columns 14 at a narrower interval and to further narrowthe interval between the metal wirings formed from the metal columns 14than when the metal column 14 is formed between the polymer layers 16 asillustrated in FIG. 17 and Embodiment 7. The metal columns 14 may formwirings that extend in the vertical direction and may form wirings thatextend in the horizontal direction.

As a modification of Embodiment 8, as illustrated in FIG. 19(a), a pairof metallic core portions 86 is provided on the surface of the substrate80, and a thin film 88 formed from silicon oxides or the like is formedso as to cover the surface of the substrate 80 and the surface of thecore portions 86. Here, the core portions 86 and the thin film 88 in theportions covering the core portions 86 form the guides 12. As withEmbodiment 1, the mixture 20 containing the metal particles 22 and thepolymers 24 is filled on the thin film 88 on the inner side of theguides 12.

After that, as illustrated in FIG. 19(b), the mixture 20 is subjected toa heat treatment so that the metal particles 22 and the polymers 24 arephase-separated. In this case, the polymers 24 agglomerate along thethin film 88 to form the polymer layer 16 between the guides 12 so as tocover the surface of the thin film 88, and the metal particles 22agglomerate to the central portion of the surface of the polymer layer16 to form the metal column 14. The thin film 88 on the upper portion ofthe core portions 86 is removed whereby the metallic core portions 86and the metal column 14 can be formed. When the metallic core portions86 and the metal column 14 are used as metallic wirings, it is possibleto form metal wirings at a narrower interval than Embodiment 7illustrated in FIG. 17. The metallic core portions 86 and the metalcolumn 17 may form wirings extending in the vertical direction and mayform wirings extending in the horizontal direction.

Embodiment 9

Embodiment 9 is an example illustrating a method of performing wiring inmultiple layers at a time. FIGS. 20(a) and 20(b) are cross-sectionalviews illustrating a method for forming metal columns 14 according toEmbodiment 9. As illustrated in FIG. 20(a), first, a plurality of guides12 is provided on a surface of a thin planar support 90 as a lowermostlayer so as to extend in a horizontal direction, and a mixture 20containing metal particles 22 and polymers 24 is filled between theguides 12 as with Embodiment 1. Subsequently, another support 90 as thesecond layer from the bottom is stacked thereon, and similarly, aplurality of guides 12 is provided and the mixture 20 is filled. In thismanner, a plurality of layers each including the support 90, the guides12, and the mixture 20 are stacked. The support 90 is preferably formedof the same material as the guides 12.

After that, as illustrated in FIG. 20(b), the mixture 20 is subjected toa heat treatment so that the metal particles 22 and the polymers 23 arephase-separated. In this case, the polymers 24 agglomerate to thesupport 90 and the guides 12 to form the polymer layer 16, and the metalparticles 22 agglomerate away from the support 90 and the guides 12 toform the metal column in the polymer layer 16. The other configurationis the same as Embodiment 1, and the description thereof will beomitted. In this way, it is possible to form the metal columns 14 at atime in the respective layers in which the plurality of supports 90 arestacked. Due to this, by removing the polymer layer 16, it is possibleto form multilayer wirings.

As illustrated in FIGS. 20(a) and 20 (b), a hole 92 is formed betweenthe respective guides 12 of the support 90. In this way, it is possibleto connect the metal columns 14 formed on the surface of the support 90to the metal columns 14 formed on the lower support 90 and toelectrically connect the layers between the respective supports 90. Therespective guides 12 are preferably provided on the surface of thesupport 90 so that the space between the respective guides 12 can beaccessed from the lateral side of the support 90 and the formed polymerlayer 16 can be removed.

While preferred embodiments of the invention have been described indetail, the present invention is not limited to the specificembodiments, and various modifications and changes can be made withoutdeparting from the scope of the present invention defined in the claims.

REFERENCE SIGNS LIST

-   -   10: Semiconductor substrate    -   11, 11 a, 11 b: Semiconductor chip    -   12: Guide    -   14: Metal column    -   16: Polymer layer    -   16 a: First polymer layer    -   16 b: Second polymer layer    -   18: Hole    -   20: Mixture    -   22: Metal particle    -   24: Polymer    -   26: Insulating film    -   28, 34, 38, 38 a to 38 f, 40: Electrode    -   30: Transistor region    -   32: Multilayer wiring    -   36: Wiring    -   50 a, 50 b: Detection circuit    -   52 a, 52 b: Switching circuit    -   54 a, 54 b: Internal circuit    -   60 a, 60 b, 62 a, 62 b, 64 a, 64 b: Wiring    -   66 a, 66 b: Switch    -   72 a, 72 b: BS circuit    -   74 a, 74 b: Buffer    -   76 a, 76 b: Control circuit    -   78 a, 78 b: Wiring    -   80: Substrate    -   82: Metal film    -   84: Guide layer    -   86: Core portion    -   88: Thin film    -   90: Support    -   92: Hole

The invention claimed is:
 1. A semiconductor device comprising: a metalcolumn that extends in a stretching direction; a polymer layer thatdirectly contacts the metal column from a direction crossing thestretching direction; a guide that surrounds the polymer layer in thecrossing direction so as to be spaced from the metal column with thepolymer layer interposed therebetween; a first substrate and a secondsubstrate stacked in the stretching direction, wherein the metal columnis a bump that electrically connects the first and second substrates; aplurality of first electrodes provided on a surface of the firstsubstrate facing the second substrate; a plurality of second electrodesprovided on a surface of the second substrate facing the firstsubstrate, wherein the metal column connects the plurality of firstelectrodes and the plurality of second electrodes; a first circuitprovided in the first substrate so as to be electrically connected tothe plurality of first electrodes; a second circuit provided in thesecond substrate so as to be electrically connected to the plurality ofsecond electrodes; a detection circuit that detects a second electrodeof the plurality of second electrodes to which at least one firstelectrode of the plurality of first electrodes is connected; and aswitching circuit that switches at least one of connection between thefirst circuit and the plurality of first electrodes and connectionbetween the second circuit and the plurality of second electrodes on thebasis of a detection result of the detection circuit.
 2. Thesemiconductor device according to claim 1, wherein the guide is providedin at least one of the first and second substrates.
 3. The semiconductordevice according to claim 1, wherein an inner portion of the guide isformed of metal.
 4. The semiconductor device according to claim 1,wherein the metal column is a multi-particle member.
 5. Thesemiconductor device according to claim 1, wherein a material of themetal column has a melting point equal to or higher than a melting pointof a material of the polymer layer.
 6. A semiconductor devicecomprising: a metal column that extends in a stretching direction; apolymer layer that directly contacts the metal column from a directioncrossing the stretching direction; and a guide that surrounds thepolymer layer in the crossing direction so as to be spaced from themetal column with the polymer layer interposed therebetween, wherein theguide is hydrophilic, and a region of the polymer layer making contactwith the guide is hydrophilic.
 7. The semiconductor device according toclaim 6, further comprising: a semiconductor substrate, wherein theguide is an insulator film formed on an inner surface of a through-holethat passes through the semiconductor substrate, the polymer layer isfilled in the through-hole, and the metal column is a penetrationelectrode that passes through the polymer layer.
 8. The semiconductordevice according to claim 6, wherein the metal column stretches in ahorizontal direction, the polymer layer is provided so as to sandwichthe metal column from a direction crossing the stretching direction, anda pair of the guides is provided so as to sandwich the metal column andthe polymer layer in the crossing direction so as to be spaced from themetal column with the polymer layer interposed therebetween.
 9. Thesemiconductor device according to claim 8, wherein the semiconductordevice is formed by stacking a plurality of planar supports in which oneor a plurality of the metal columns and a plurality of the guides areprovided so as to stretch along a surface in a vertical direction to thesurface.
 10. The semiconductor device according to claim 6, wherein thepolymer layer includes a hydrophilic polymer layer provided on an innerside of the guide and a hydrophobic polymer layer provided on an innerside of the hydrophilic polymer layer, and the metal column is providedon an inner side of the hydrophobic polymer layer.
 11. The semiconductordevice according to claim 6, wherein an inner portion of the guide isformed of metal.
 12. The semiconductor device according to claim 6,wherein the metal column is a multi-particle member.
 13. Thesemiconductor device according to claim 6, wherein a material of themetal column has a melting point equal to or higher than a melting pointof a material of the polymer layer.
 14. A semiconductor devicecomprising: a metal column that extends in a stretching direction; apolymer layer that directly contacts the metal column from a directioncrossing the stretching direction; and a guide that surrounds thepolymer layer in the crossing direction so as to be spaced from themetal column with the polymer layer interposed therebetween, wherein theguide is hydrophobic and a region of the polymer layer making contactwith the guide is hydrophobic.
 15. The semiconductor device according toclaim 14, wherein the polymer layer includes a hydrophobic polymer layerprovided on an inner side of the guide and a hydrophilic polymer layerprovided on an inner side of the hydrophilic polymer layer, and themetal column is provided on an inner side of the hydrophilic polymerlayer.
 16. The semiconductor device according to claim 14, furthercomprising: a semiconductor substrate, wherein the guide is an insulatorfilm formed on an inner surface of a through-hole that passes throughthe semiconductor substrate, the polymer layer is filled in thethrough-hole, and the metal column is a penetration electrode thatpasses through the polymer layer.
 17. The semiconductor device accordingto claim 14, wherein the metal column stretches in a horizontaldirection, the polymer layer is provided so as to sandwich the metalcolumn from a direction crossing the stretching direction, and a pair ofthe guides is provided so as to sandwich the metal column and thepolymer layer in the crossing direction so as to be spaced from themetal column with the polymer layer interposed therebetween.
 18. Thesemiconductor device according to claim 17, wherein the semiconductordevice is formed by stacking a plurality of planar supports in which oneor a plurality of the metal columns and a plurality of the guides areprovided so as to stretch along a surface in a vertical direction to thesurface.
 19. The semiconductor device according to claim 14, wherein aninner portion of the guide is formed of metal.
 20. The semiconductordevice according to claim 14, wherein the metal column is amulti-particle member.
 21. The semiconductor device according to claim14, wherein a material of the metal column has a melting point equal toor higher than a melting point of a material of the polymer layer.